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CHU2277A98F rohs compliant ref. : dschu2277a0266 - 23 sept 10 1/12 specifications subject to change without notic e united monolithic semiconductors s.a.s. route dpartementale 128 - bp46 - 91401 orsay cedex france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 w-band multifunction: multiplier / mpa gaas monolithic microwave ic description the chu2277a is a w-band monolithic multifunction which integrates a frequency multiplier, a four-stage amplifier and a power divider. the frequency multiplier is based on an active transistor and allows operating at low input level with reduced power consumption. this chip provides two outputs at 77ghz, the main one is for the transmission path and the auxiliary one for the receiving mixer(s) lo signal. all the active devices are internally self-biased. this chip is compatible with automatic equipment for assembly. the circuit is manufactured with the p-hemt process: 0.15m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is available in chip form. x2 out1 out2 in +v -v main features wide operating frequency range low input power : 5dbm typical high output power (out1) auxiliary output power (out2 low am noise high temperature range on-chip self biasing low dc power consumption bcb layer protection chip size: 4.65x1.6x0.1mm 0 2 4 6 8 10 12 14 16 18 20 75 75,5 76 76,5 77 77,5 78 78,5 79 output frequency (ghz) output power (dbm) typical output power characteristic pin = 7dbm (on wafer measurement ) main characteristics tamb.= +25c symbol parameter min typ max unit freq frequency range 38.0 38.5 ghz p_in input power 0 5 12 dbm p_out1 output power (out1) 13 dbm p_out2 output power (out2) 10 dbm esd protection: electrostatic discharge sensitive d evice. observe handling precautions! out1 out2 1
CHU2277A98F w-band multiplier/mpa ref. : dschu2277a0266 - 23 sept 10 2/12 specificati ons subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 main characteristics tamb.= +25c symbol parameter min typ max unit f_in input frequency 38.0 38.5 ghz f_out output frequency 76 77 db p_in input power 0 5 12 db p_out1 output power (out1) (1) 13 dbm p_out2 output power (out2) (2) 10 dbm fin_rej fundamental rejection (dbc/pout1(2fin)) 55 dbc s_rej spurious rejection (harmonic rejection) 74 ghz 40 dbc 111 ghz 40 dbc spurious rejection (non harmonic rej.) 76.5ghz 40 dbc an amplitude noise @ 1khz (ssb) -137 dbc/hz amplitude noise @ 10khz (ssb) -145 dbc/hz amplitude noise @ 100khz (ssb) -151 dbc/hz amplitude noise @ 200khz (ssb) -153 dbc/hz amplitude noise @ 1mhz (ssb) -157 dbc/hz vswr_in vswr at input port (50 ? ) 2:1 2.5:1 +v positive supply voltage (2) 4.4 4.5 4.6 v +i positive supply current 180 240 ma -v negative supply voltage (2) -4.6 -4.5 -4.4 v -i negative supply current 14 20 ma top operating temperature range -40 100 c (1) defined on load vswr 1.5:1 (2) negative supply voltage must be applied at least 1 s before positive supply voltage
w-band multiplier/mpa CHU2277A98F ref. : dschu2277a0266 - 23 sept 10 3/12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 absolute maximum ratings tamb.= +25c (1) symbol parameter values unit p_in input power (2) 13 dbm +v positive supply voltage 5 v -v negative supply voltage -5 v +i positive supply current 250 ma -i negative supply current 20 ma tstg storage temperature range -55 to +155 c (1) operation of this device above anyone of these par ameters may cause permanent damage. (2) duration < 1s. typical bias conditions tamb.= +25c symbol pad n o parameter values unit +v 10 positive supply voltage +4.5 v -v 12 negative supply voltage -4.5 v
CHU2277A98F w-band multiplier/mpa ref. : dschu2277a0266 - 23 sept 10 4/12 specificati ons subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical on wafer measurements tamb.= +25c, vd = +4.5v, +i = 200ma output power (out2): p_in=+6dbm 0 2 4 6 8 10 12 14 16 18 20 75,0 75,5 76,0 76,5 77,0 77,5 78,0 output frequency (ghz) pin=7dbm output power (dbm) positive supply current (f_in=38.25ghz, p_in=+6dbm ) 0 50 100 150 200 250 0 100 200 300 400 500 600 700 chip +i (ma)
w-band multiplier/mpa CHU2277A98F ref. : dschu2277a0266 - 23 sept 10 5/12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical on wafer measurements tamb.= +25c, +v = +4.5v, -v=-4.5v negative supply current (f_in=38.25ghz, p_in=+6dbm ) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 0 100 200 300 400 500 600 700 chip -i (ma) am noise over temperature (f_in=38.25ghz p_in=+4db m) am noise (chu2277 (tx2) in test jig, @ t=25c, vd=+4.5v, out _freq=76.5ghz) dbc/hz test bench noise floor
CHU2277A98F w-band multiplier/mpa ref. : dschu2277a0266 - 23 sept 10 6/12 specificati ons subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical on wafer measurements tamb.= +25c, +v = +4.5v, -v = -4.5v harmonic spurious rejection: f_out=74ghz, p_in=+7d bm harmonic spurious rejection: f_in=74ghz, p_in=+7db m 3xfin<-40dbc 2xfin<-40dbc
w-band multiplier/mpa CHU2277A98F ref. : dschu2277a0266 - 23 sept 10 7/12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical on wafer measurements tamb.= +25c, +v = +4.5v, -v = -4.5v no harmonic spurious rejection: f_out=76.5ghz, p_i n=+7dbm
CHU2277A98F w-band multiplier/mpa ref. : dschu2277a0266 - 23 sept 10 8/12 specificati ons subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 mechanical data unit = m external chip size (layout size + dicing streets) = 4650x1600 35 chip thickness = 100 10 hf pads (2, 5,8) = 105x86 (bcb opening) dc pads = 86x83 (bcb opening) pin number pin name description 1, 3, 4, 6, 7, 9 ground: should not be bonded. if required, please ask for more information 11 ground (optional) 2 in input port 5 out1 main output 8 out2 auxiliary output 10 +v positive supply voltage 12 -v negative supply voltage
w-band multiplier/mpa CHU2277A98F ref. : dschu2277a0266 - 23 sept 10 9/12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 recommended assembly plan 25m wedge bonding is preferred note: supply feed should be bypassed. 25m diameter gold wire is to be preferred. this drawing shows an example of assembly and bias configuration. all the transistors are internally self-biased. an external capacitor is recommended for the positive and negative supply voltages. for the rf pads the equivalent wire bonding inducta nce (diameter=25m) have to be according to the following recommendation. recommended circuit bonding table port equivalent inductance (nh) wire length (mm) (1) in (2) l_in=0.32 0.4 out1 (5) l_out1=0.32 0.4 out2 (8) l_out2=0.32 0.4 (1) this value is the total length including the neces sary loop from pad to pad. for a micro-strip configuration a hole in the subst rate is necessary for chip assembly
CHU2277A98F w-band multiplier/mpa ref. : dschu2277a0266 - 23 sept 10 10/12 specificat ions subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 notes as the connections at 77ghz (between mmic and mmic or between mmic and external substrate) are critical, the transition ma tching network is split into two parts: one on mmic and one on the external substrat e. this choice allows doing, for out2 port, a direct connection between mmics. f or a connection to an external substrate a network is proposed on soft su bstrate for out1 and out2 ports. the following drawings gives the dimensions for a duroid substrate (thickness=0.127mm, r =2.2). proposed matching network for a 50 w transition between out1 and a -strip line on duroid substrate. proposed matching network for a 50 w transition between out2 and a -strip line on duroid substrate.
w-band multiplier/mpa CHU2277A98F ref. : dschu2277a0266 - 23 sept 10 11/12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 notes
CHU2277A98F w-band multiplier/mpa ref. : dschu2277a0266 - 23 sept 10 12/12 specificat ions subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 recommended esd management refer to the application note an0020 available at http://www.ums-gaas.com for esd sensitivity and handling recommendations for the um s products. ordering information chip form: CHU2277A98F/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s.

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